Highlights [show all]

Doped MoTe2 as 2D PCM

Metal-insulator transitions in two dimensional materials represent a great opportunity for fast, low energy, and ultradense switching devices. Due to the small energy difference between its semimetallic and semiconducting crystal phases, phase transition in MoTe2 can occur with an unprecedented small amount of external perturbations.

ReaxFF for Cu/GeS2

To accelerate the search of efficient solid electrolytes for resistive switching device, we developed parameters to describe copper doped germanium sulfides based on ReaxFF. Based on this novel model, we studied the mobility of Cu in amorphous GeS and we investigated the atomic and electronic structure in details.